Press release
Global Insulated-Gate Bipolar Transistors (IGBTs) market report, size, share, trends and forecast to 2028
The Insulated Gate Bipolar Transistor, or IGBT, is a three-point power electronic semiconductor that serves primarily as a switch. By reducing the congestion in the power supply, this device can deliver quick switching with extremely high efficiency and a steady, smooth power supply. By introducing lesser switch loss, it reduces the heat tension on the electric devices or appliances, resulting in an increase in the device's lifespan. Because of its great power efficiency and blocking voltage, IGBTs (Insulated Gate Bipolar Transistors) are employed in a variety of applications.
The development of the IGBT market will be accelerated by the need to strengthen the foundations for renewable energy. By 2050, the total share of renewable energy in the electricity industry is anticipated to reach 85%, according to the International Renewable Energy Agency (IRENA). The usage of heat pumps and electric vehicles is anticipated to increase globally, according to the IRENA analysis. Renewable energy is a significant component of the long-term strategic investment development of governments in numerous nations.
By geography, Asia Pacific is projected to hold the largest market share during the forecast period owing to the presence of many electronic and semiconductor manufacturers in China, South Korea, and India. Due to its position as the world's top producer of electric vehicles, China is predicted to receive the largest revenue share. The country's market is expanding as a result of the increased use in electric automobiles. Along with the development of technology, the demand for energy-saving resources is also rising in India and Japan.
Some of the key players profiled in the Insulated-Gate Bipolar Transistors (IGBTs) Market include ABB Ltd, Infineon Technologies AG, LITTELFUSE, INC., StarPower Semiconductor Ltd., ROHM CO., LTD, Toshiba Corporation, Hitachi, Ltd., Fuji Electric Co., Ltd., Mitsubishi Electric Corporation, Danfoss Group, SEMIKRON International GmbH, Renesas Electronics Corporation
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By Types:
• Discrete Insulated-Gate Bipolar Transistor (IGBT)
• Insulated-Gate Bipolar Transistor (IGBT) Module
By Power Ratings:
• High Power Rating
• Medium Power Rating
• Low Power Rating
By Applications:
• Consumer Electronics
• Energy & Power
• Electric Vehicle
• Inverter & Uninterrupted Power Supply (UPS)
• Industrial System
• Other Applications
Free Customization Offerings:
All the customers of this report will be entitled to receive one of the following free customization options:
● Company Profiling
● Comprehensive profiling of additional market players (up to 3)
● SWOT Analysis of key players (up to 3)
● Regional Segmentation
● Market estimations, Forecasts and CAGR of any prominent country as per the client's interest (Note: Depends on feasibility check)
● Competitive Benchmarking
● Benchmarking of key players based on product portfolio, geographical presence, and strategic alliances
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